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Patent 7432132 Click For Printable Version of This Patent
Patent Information:  USPTO Site Listing

Patent Number: 7432132
Case ID: 0
Patent Title: Integrated diamond carrier method for laser bar arrays
Status: ACTIVE
Status Date: 2/3/2010 10:48:16 AM
Issue Date: 10/7/2008
Filed Date: 3/28/2005
Serial #: 1/091,685
Assignee Name: United States of America as represented by the Secretary of the Air Force (Washington, DC)
Inventor(s): Rotter, Shlomo Z. , Heidger, Susan L.
Lab Information:  View Lab Profile

Lab Name: Directed Energy Directorate
Location: 2301 Henderson St., Bldg 401, Rm. 113
Kirtland AFB, NM 87117-5776
Contact: Contact Lab About This Patent
   
Abstract:
A method of making efficient Integrated Diamond Carrier heat sink and mounting structures usable typically to mount the solid-state laser bars often employed for pumping high power lasers, for example. The disclosed method forms the Integrated Diamond Carrier on a shaped sacrificial substrate member by chemical vapor deposition growing of diamond on a patterned substrate, made from for example silicon semiconductor. The substrate serves as a mold and is etched away after Integrated Diamond Carrier base plate formation leaving the freestanding diamond carrier. Optically usable surfaces are achieved on the Integrated Diamond Carrier through use of substrate crystal plane characteristics and an improved deposition arrangement.
Claims:
We claim:

1. The method of fabricating an integral laser diode array-mounting and cooling diamond heat sink structure comprising the steps of: forming a semiconductor mold member having a complementary inverse pattern surface region with respect to a configuration needed for said diamond heat sink structure; pretreating said semiconductor mold member complementary inverse pattern surface region to achieve a covering selected thickness film of diamond seeding elemental carbon powder thereon; said pretreating step including generating, with one of a chemical vapor deposition process and a multiple hot gas decomposition process, said elemental carbon powder film on said mold member complementary inverse pattern surface region; seeding said pretreated semiconductor mold member complementary inverse pattern surface region with a coating of diamond powder; said seeding step including suspending said pretreated semiconductor mold member in a liquid suspension of diamond powder;  . . . . More