|
|
Patent Number: |
7432132 |
|
|
Case ID: |
0 |
|
|
Patent Title:
|
Integrated diamond carrier method for laser bar arrays
|
|
|
Status: |
ACTIVE |
|
|
Status Date: |
2/3/2010 10:48:16 AM |
|
|
Issue Date:
|
10/7/2008 |
|
|
Filed Date:
|
3/28/2005 |
|
|
Serial #:
|
1/091,685 |
|
|
Assignee Name:
|
United States of America as represented by the Secretary of the Air Force
(Washington,
DC)
|
|
|
Inventor(s):
|
Rotter, Shlomo Z. , Heidger, Susan L. |
|
|
Lab Name: |
Directed Energy Directorate |
|
|
Location: |
2301 Henderson St., Bldg 401, Rm. 113 Kirtland AFB, NM 87117-5776 |
|
|
Contact: |
Contact Lab About This Patent |
|
|
|
|
A method of making efficient Integrated Diamond Carrier heat sink and
mounting structures usable typically to mount the solid-state laser bars
often employed for pumping high power lasers, for example. The disclosed
method forms the Integrated Diamond Carrier on a shaped sacrificial
substrate member by chemical vapor deposition growing of diamond on a
patterned substrate, made from for example silicon semiconductor. The
substrate serves as a mold and is etched away after Integrated Diamond
Carrier base plate formation leaving the freestanding diamond carrier.
Optically usable surfaces are achieved on the Integrated Diamond Carrier
through use of substrate crystal plane characteristics and an improved
deposition arrangement.
|
|
|
|
|
We claim:
1. The method of fabricating an integral laser diode array-mounting and cooling diamond heat sink structure comprising the steps of: forming a semiconductor mold member having a
complementary inverse pattern surface region with respect to a configuration needed for said diamond heat sink structure; pretreating said semiconductor mold member complementary inverse pattern surface region to achieve a covering selected thickness
film of diamond seeding elemental carbon powder thereon; said pretreating step including generating, with one of a chemical vapor deposition process and a multiple hot gas decomposition process, said elemental carbon powder film on said mold member
complementary inverse pattern surface region; seeding said pretreated semiconductor mold member complementary inverse pattern surface region with a coating of diamond powder; said seeding step including suspending said pretreated semiconductor mold
member in a liquid suspension of diamond powder; . . . . More |
|
|
|
|